RODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.053 at VGS = 10 V 3.4 0.075 at VGS = 4.5 V 2.9 * Halogen-free * TrenchFET(R) Power MOSFETs: 2.5 V Rated RoHS COMPLIANT D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 G1 G2 6 S2 5 G2 Top View Ordering Information: SI6954ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)a TA = 25 C TA = 70 C Continuous Source Current (Diode Conduction)a IS TA = 25 C TA = 70 C PD 3.1 2.7 2.5 20 0.83 0.69 1.0 0.83 0.96 0.53 TJ, Tstg Operating Junction and Storage Temperature Range V 3.4 IDM Pulsed Drain Current (10 s Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t 10 s Steady State Steady State RthJA RthJF Typical Maximum 90 125 126 1
RODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.053 at VGS = 10 V 3.4 0.075 at VGS = 4.5 V 2.9 * Halogen-free * TrenchFET(R) Power MOSFETs: 2.5 V Rated RoHS COMPLIANT D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 G1 G2 6 S2 5 G2 Top View Ordering Information: SI6954ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)a TA = 25 C TA = 70 C Continuous Source Current (Diode Conduction)a IS TA = 25 C TA = 70 C PD 3.1 2.7 2.5 20 0.83 0.69 1.0 0.83 0.96 0.53 TJ, Tstg Operating Junction and Storage Temperature Range V 3.4 IDM Pulsed Drain Current (10 s Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t 10 s Steady State Steady State RthJA RthJF Typical Maximum 90 125 126 1
6 5 8-SOIC 4.22 16P3725 1.48 25 11.5 18A 1.4 2.5 8-SOIC 0.72 16P3745 3.01 25 3.2 36A 2.2 3.5 8-SOIC 3.01 16P3749 1.57 25 7 23.1A 2.2 3.1 8-SOIC 1.58 16P3750 1.57 25 12.5 16.2A 2.6 2.5 8-SOIC --- Mfg. Part No. SI1070X-T1-GE3 SI1072X-T1-GE3 SI2304BDS-T1-GE3 SI6954ADQ-T1-GE3 SI2306BDS-T1-GE3 SI3456BDV-T1-GE3 SIA408DJ-T1-GE3 SI2316BDS-T1-GE3 SIA814DJ-T1-GE3 SI4346DY-T1-GE3 SI5424DC-T1-GE3 SI3424BDV-T1-GE3 SI6410DQ-T1-GE3 SI4800BDY-T1-GE3 SI7326DN-T1-GE3 SIA432DJ-T1-GE3 SI4890BDY-T1-GE3 SIF912EDZ-T1-GE3 SI4860DY-T1-GE3 SI7860DP-T1-GE3 SI4688DY-T1-GE3 SI7720DN-T1-GE3 SI5418DU-T1-GE3 SI5480DU-T1-GE3 SI7404DN-T1-GE3 SI4420BDY-T1-GE3 SI7230DN-T1-GE3 SI4442DY-T1-GE3 SI4404DY-T1-GE3 SI7652DP-T1-GE3 SI4386DY-T1-GE3 SI7716ADN-T1-GE3 SI4686DY-T1-GE3 SI7114ADN-T1-GE3 SI4430BDY-T1-GE3 SI7684DP-T1-GE3 SI7682DP-T1-GE3 SIR472DP-T1-GE3 SI4634DY-T1-GE3 SI7892BDP-T1-E3 SI7892BDP-T1-GE3 SI4842BDY-T1-GE3 SI4164DY-T1-GE3 SI4170DY-T1-GE3 SUD50N03-06P-E3* SI7328DN-T1-GE3 SIS402DN-T1-GE3 SI7718DN-T1-GE3 SI7784DP-T1-GE3 SI77
RODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.053 at VGS = 10 V 3.4 0.075 at VGS = 4.5 V 2.9 * Halogen-free * TrenchFET(R) Power MOSFETs: 2.5 V Rated RoHS COMPLIANT D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 G1 G2 6 S2 5 G2 Top View Ordering Information: SI6954ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)a TA = 25 C TA = 70 C Continuous Source Current (Diode Conduction)a IS TA = 25 C TA = 70 C PD 3.1 2.7 2.5 20 0.83 0.69 1.0 0.83 0.96 0.53 TJ, Tstg Operating Junction and Storage Temperature Range V 3.4 IDM Pulsed Drain Current (10 s Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t 10 s Steady State Steady State RthJA RthJF Typical Maximum 90 125 126 1
RODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.053 at VGS = 10 V 3.4 0.075 at VGS = 4.5 V 2.9 * Halogen-free * TrenchFET(R) Power MOSFETs: 2.5 V Rated RoHS COMPLIANT D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 G1 G2 6 S2 5 G2 Top View Ordering Information: SI6954ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)a TA = 25 C TA = 70 C Continuous Source Current (Diode Conduction)a IS TA = 25 C TA = 70 C PD 3.1 2.7 2.5 20 0.83 0.69 1.0 0.83 0.96 0.53 TJ, Tstg Operating Junction and Storage Temperature Range V 3.4 IDM Pulsed Drain Current (10 s Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t 10 s Steady State Steady State RthJA RthJF Typical Maximum 90 125 126 1
RODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.053 at VGS = 10 V 3.4 0.075 at VGS = 4.5 V 2.9 * Halogen-free * TrenchFET(R) Power MOSFETs: 2.5 V Rated RoHS COMPLIANT D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 G1 G2 6 S2 5 G2 Top View Ordering Information: SI6954ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)a TA = 25 C TA = 70 C Continuous Source Current (Diode Conduction)a IS TA = 25 C TA = 70 C PD 3.1 2.7 2.5 20 0.83 0.69 1.0 0.83 0.96 0.53 TJ, Tstg Operating Junction and Storage Temperature Range V 3.4 IDM Pulsed Drain Current (10 s Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t 10 s Steady State Steady State RthJA RthJF Typical Maximum 90 125 126 1
RODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.053 at VGS = 10 V 3.4 0.075 at VGS = 4.5 V 2.9 * Halogen-free * TrenchFET(R) Power MOSFETs: 2.5 V Rated RoHS COMPLIANT D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 G1 G2 6 S2 5 G2 Top View Ordering Information: SI6954ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)a TA = 25 C TA = 70 C Continuous Source Current (Diode Conduction)a IS TA = 25 C TA = 70 C PD 3.1 2.7 2.5 20 0.83 0.69 1.0 0.83 0.96 0.53 TJ, Tstg Operating Junction and Storage Temperature Range V 3.4 IDM Pulsed Drain Current (10 s Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t 10 s Steady State Steady State RthJA RthJF Typical Maximum 90 125 126 1
Q-T1-GE3 SI6924AEDQ-T1-E3 SI6924AEDQ-T1-GE3 SI6925ADQ-T1-E3 SI6925ADQ-T1-GE3 SI6926ADQ-T1-E3 SI6926ADQ-T1-GE3 SI6926AEDQ-T1-E3 SI6926AEDQ-T1-GE3 SI6928DQ-T1-E3 SI6928DQ-T1-GE3 SI6933DQ-T1-E3 SI6933DQ-T1-GE3 SI6943BDQ-T1-E3 SI6943BDQ-T1-GE3 SI6954ADQ-T1-E3 SI6954ADQ-T1-GE3 SI6955ADQ-T1-E3 SI6955ADQ-T1-GE3 SI6955DQ-T1-E3 SI6955DQ-T1-GE3 SI6963BDQ-T1-E3 SI6963BDQ-T1-GE3 SI6966DQ-T1-E3 SI6966DQ-T1-GE3 SI6966EDQ-T1-E3 SI6966EDQ-T1-GE3 SI6967DQ-T1-E3 SI6967DQ-T1-GE3 SI6968ADQ-T1-E3 SI6968ADQ-T1-GE3 SI6969BDQ-T1-E3 SI6969BDQ-T1-GE3 SI6969DQ-T1-E3 SI6969DQ-T1-GE3 SI6973DQ-T1-E3 SI6973DQ-T1-GE3 SI6975DQ-T1-E3 SI6975DQ-T1-GE3 SI6981DQ-T1-E3 SI6981DQ-T1-GE3 SI6983DQ-T1-E3 SI6983DQ-T1-GE3 SI6991DQ-T1-E3 SI6991DQ-T1-GE3 SI6993DQ-T1-E3 SI6993DQ-T1-GE3 V30305-T1-E3 V30305-T1-GE3 PPAKSC70 Current P/N New HF Part SIA408DJ-T1-E3 SIA408DJ-T1-GE3 SIA411DJ-T1-E3 SIA411DJ-T1-GE3 SIA413DJ-T1-E3 SIA413DJ-T1-GE3 SIA414DJ-T1-E3 SIA414DJ-T1-GE3 SIA415DJ-T1-E3 SIA415DJ-T1-GE3 SIA417DJ-T1-E3 SIA417DJ-T1-GE3 SIA419DJ-T1-E3 SI
RODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.053 at VGS = 10 V 3.4 0.075 at VGS = 4.5 V 2.9 * Halogen-free * TrenchFET(R) Power MOSFETs: 2.5 V Rated RoHS COMPLIANT D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 G1 G2 6 S2 5 G2 Top View Ordering Information: SI6954ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)a TA = 25 C TA = 70 C Continuous Source Current (Diode Conduction)a IS TA = 25 C TA = 70 C PD 3.1 2.7 2.5 20 0.83 0.69 1.0 0.83 0.96 0.53 TJ, Tstg Operating Junction and Storage Temperature Range V 3.4 IDM Pulsed Drain Current (10 s Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t 10 s Steady State Steady State RthJA RthJF Typical Maximum 90 125 126 1
RODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.053 at VGS = 10 V 3.4 0.075 at VGS = 4.5 V 2.9 * Halogen-free * TrenchFET(R) Power MOSFETs: 2.5 V Rated RoHS COMPLIANT D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 G1 G2 6 S2 5 G2 Top View Ordering Information: SI6954ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)a TA = 25 C TA = 70 C Continuous Source Current (Diode Conduction)a IS TA = 25 C TA = 70 C PD 3.1 2.7 2.5 20 0.83 0.69 1.0 0.83 0.96 0.53 TJ, Tstg Operating Junction and Storage Temperature Range V 3.4 IDM Pulsed Drain Current (10 s Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t 10 s Steady State Steady State RthJA RthJF Typical Maximum 90 125 126 1