IRF820PBF
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 3 Ohms; ID 2.5A; TO-220AB; PD 50W; VGS +/-20V

From Vishay PCS

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Dimensions10.51 x 4.65 x 15.49 mm
Forward Diode Voltage1.6 V
Forward Transconductance1.5 S
Height15.49 mm
Length10.51 mm
Maximum Continuous Drain Current2.5 A
Maximum Drain Source Resistance3 Ω
Maximum Drain Source Voltage500 V
Maximum Gate Source Voltage±20 V
Maximum Operating Temperature+150 °C
Maximum Power Dissipation50 W
Minimum Operating Temperature-55 °C
Mounting TypeThrough Hole
Number of Elements per Chip1
Operating Temperature Range-55 to +150 °C
Package TypeTO-220AB
Pin Count3
Typical Gate Charge @ VgsMaximum of 24 nC @ 10 V
Typical Input Capacitance @ Vds360 pF @ 25 V
Typical Turn On Delay Time8 ns
Typical TurnOff Delay Time33 ns
Width4.65 mm

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