IRF624SPBF MOSFET, POWER; N-CHANNEL; 1.1 OHMS (MAX.) @ DEGC; 250 V (MIN.) @ DEGC
From Vishay PCS
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Dimensions | 10.67 x 9.65 x 4.83 mm |
| Forward Diode Voltage | 1.8 V |
| Forward Transconductance | 1.5 S |
| Height | 4.83 mm |
| Length | 10.67 mm |
| Maximum Continuous Drain Current | 4.4 A |
| Maximum Drain Source Resistance | 1.1 Ω |
| Maximum Drain Source Voltage | 250 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 50 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | D2PAK |
| Pin Count | 3 |
| Typical Gate Charge @ Vgs | Maximum of 14 nC @ 10 V |
| Typical Input Capacitance @ Vds | 260 pF @ 25 V |
| Typical Turn On Delay Time | 7 ns |
| Typical TurnOff Delay Time | 20 ns |
| Width | 9.65 mm |



