IRFD110 MOSFET N-CH 100V 1A 4-DIP
From Vishay Siliconix
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Datasheets | IRFD110 |
| Drain to Source Voltage (Vdss) | 100V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 8.3nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 180pF @ 25V |
| Mounting Type | Through Hole |
| Online Catalog | N-Channel Standard FETs |
| Other Names | *IRFD110 IRFD111 IRFD112 |
| PCN Obsolescence/ EOL | SIL-018-2015-Rev-0 20/May/2015 |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Packaging | Tube |
| Power - Max | 1.3W |
| Product Photos | 4-DIP |
| Rds On (Max) @ Id, Vgs | 540 mOhm @ 600mA, 10V |
| Series | - |
| Standard Package | 2,500 |
| Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
