BDT62C PNP Darlington Transistor - R1 = 4.0k, R2 = 60 ohm typ. C-E Diode.
From Various
| @I(B) (A) (Test Condition) | 80m |
| @I(C) (A) (Test Condition) | 8.0 |
| @V(CBO) (V) (Test Condition) | 120 |
| @V(CE) (V) (Test Condition) | 3.0 |
| Absolute Max. Power Diss. (W) | 90 |
| I(C) Abs.(A) Collector Current | 10 |
| I(CBO) Max. (A) | 200u |
| Military | N |
| Package | TO-220AB |
| Semiconductor Material | Silicon |
| V(BR)CBO (V) | 120 |
| V(BR)CEO (V) | 120 |
| V(CE)sat Max.(V) | 2.5 |
| f(T) Min. (Hz) Transition Freq | 10M |
| h(FE) Min. Static Current Gain | 1.0k |
| t(off) Max. (s) Turn-Off Time | 5.0u |
| t(on) Max. (s) Turn-On Time | 1.5u |
