2SA1020-Y(TE6,F,M) Bipolar Transistors - BJT PNP -50V -2A 900mW
From Toshiba
| Brand | Toshiba |
| Collector- Base Voltage VCBO | - 50 V |
| Collector- Emitter Voltage VCEO Max | - 50 V |
| Collector-Emitter Saturation Voltage | - 0.5 V |
| Configuration | Single |
| DC Collector/Base Gain hfe Min | 70 |
| DC Current Gain hFE Max | 240 |
| Emitter- Base Voltage VEBO | - 5 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product fT | 100 MHz |
| Manufacturer | Toshiba |
| Maximum DC Collector Current | - 2 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-92 MOD |
| Packaging | Ammo Pack |
| Pd - Power Dissipation | 900 mW |
| Product Category | Bipolar Transistors - BJT |
| RoHS | Details |
| Transistor Polarity | PNP |
