SGM2004M N-Channel Dual-Gate UHF-Microwave MESFET
From Sony Semiconductor
| @Freq. (Hz) (Test Condition) | 1M |
| @I(D) (A) (Test Condition) | 8m |
| @Temp (°C) (Test Condition) | 25 |
| @V(DS) (V) (Test Condition) | 5 |
| C(iss) Max. (F) | 2p |
| I(D) Abs. Drain Current (A) | 55m |
| I(DSS) Max. (A) | 28m |
| I(DSS) Min. (A) | 8m |
| Noise Figure Max. (dB) | 2.5 |
| P(D) Max.(W) Power Dissipation | 150m |
| Package | SOT-143var |
| Power Gain Min. (dB) | 15 |
| Semiconductor Material | GaAs |
| V(BR)DSS (V) | 12 |
| V(BR)GSS (V) | 5 |
| V(GS)off Max. (V) | 2.5 |
| g(fs) Max, (S) Trans. conduct, | 15m |
| g(fs) Min. (S) Trans. conduct. | 11m |
