2SK2429 N-Channel Enhancement MOSFET
From ROHM Electronics
| @I(D) (A) (Test Condition) | 1.5 |
| @V(GS) (V) (Test Condition) | 10 |
| Absolute Max. Power Diss. (W) | 1.2 |
| I(D) Abs. Drain Current (A) | 3.0 |
| Military | N |
| Package | SIP |
| V(BR)DSS (V) | 300 |
| r(DS)on Max. (Ohms) | .125 |
