BF998WR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
From NXP
| Status | ACTIVE |
| Case Connection | SOURCE |
| Channel Type | N-CHANNEL |
| China RoHS Compliant | Yes |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 12 V |
| Drain Current-Max (ID) | 0.0300 A |
| EU RoHS Compliant | Yes |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| Lead Free | Yes |
| Mfr Package Description | MICRO MINIATURE, PLASTIC PACKAGE-4 |
| Number of Elements | 2 |
| Number of Terminals | 4 |
| Operating Mode | DUAL GATE, DEPLETION |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Power Dissipation Ambient-Max | 0.3000 W |
| Surface Mount | Yes |
| Terminal Finish | TIN |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Type | RF SMALL SIGNAL |
