W3H32M64E-400SBI 32M X 64 DDR DRAM, 0.6 ns, PBGA208
From Microsemi Corp.
| Status | ACTIVE |
| Access Mode | FOUR BANK PAGE BURST |
| Access Time-Max (tRAC) | 0.6000 ns |
| Memory Density | 2.15E9 deg |
| Memory IC Type | DDR DRAM |
| Memory Width | 64 |
| Mfr Package Description | 16 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 208 |
| Number of Words | 3.36E7 words |
| Number of Words Code | 32M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -40 Cel |
| Organization | 32M X 64 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY |
| Supply Voltage-Max (Vsup) | 1.9 V |
| Supply Voltage-Min (Vsup) | 1.7 V |
| Supply Voltage-Nom (Vsup) | 1.8 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | BALL |
| Terminal Position | BOTTOM |
