MA4E2502H-1246W SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
From M/A-COM Technology Solutions, Inc.
| Status | ACTIVE |
| CW RF Incident Power-Max | 0.1000 W |
| Configuration | SINGLE |
| Diode Capacitance-Max | 0.1200 pF |
| Diode Element Material | SILICON |
| Diode Type | MIXER DIODE |
| Frequency Band | KU BAND |
| Mfr Package Description | CASE 1246, 2 PIN |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Surface Mount | Yes |
| Technology | SCHOTTKY |
| Terminal Form | NO LEAD |
| Terminal Position | BOTTOM |
| Type of Schottky Barrier | HIGH BARRIER |
