IXFT20N100P
MOSFET N-CH 1000V 20A TO-268

From IXYS

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C20A (Tc)
DatasheetsIXF(H,T)20N100P
Drain to Source Voltage (Vdss)1000V (1kV)
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs126nC @ 10V
Input Capacitance (Ciss) @ Vds7300pF @ 25V
Mounting TypeSurface Mount
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
PackagingTube
Power - Max660W
Rds On (Max) @ Id, Vgs570 mOhm @ 10A, 10V
SeriesHiPerFET™, PolarP2™
Standard Package30
Supplier Device PackageTO-268
Vgs(th) (Max) @ Id6.5V @ 1mA

External links