IPW50R399CP MOSFET N-CH 560V 9A TO-247
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Datasheets | IPW50R399CP |
| Drain to Source Voltage (Vdss) | 560V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 23nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 890pF @ 100V |
| Mounting Type | Through Hole |
| Other Names | IPW50R399CPFKSA1 SP000259980 |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Power - Max | 83W |
| Product Photos | IPW65R095C7XKSA1 |
| Product Training Modules | CoolMOS™ CP High Voltage MOSFETs Converters |
| Rds On (Max) @ Id, Vgs | 399 mOhm @ 4.9A, 10V |
| Series | CoolMOS™ |
| Standard Package | 240 |
| Supplier Device Package | PG-TO247-3 |
| Vgs(th) (Max) @ Id | 3.5V @ 330µA |
