IPI90R800C3 MOSFET N-CH 900V 6.9A TO-262
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Tc) |
| Datasheets | IPI90R800C3 |
| Drain to Source Voltage (Vdss) | 900V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 42nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 100V |
| Mounting Type | Through Hole |
| Other Names | IPI90R800C3XKSA1 SP000413730 SP000683086 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Packaging | Tube |
| Power - Max | 104W |
| Product Photos | TO-262-3 |
| Product Training Modules | CoolMOS™ CP High Voltage MOSFETs Converters |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 4.1A, 10V |
| Series | CoolMOS™ |
| Standard Package | 500 |
| Supplier Device Package | PG-TO262-3 |
| Vgs(th) (Max) @ Id | 3.5V @ 460µA |
