BSZ12DN20NS3G MOSFET N-CH 200V 11.3A 8TSDSON
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 11.3A (Tc) |
| Datasheets | BSZ12DN20NS3G |
| Drain to Source Voltage (Vdss) | 200V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 8.7nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 680pF @ 100V |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Standard FETs |
| Other Names | BSZ12DN20NS3GDKR |
| Package / Case | 8-PowerTDFN |
| Packaging | Digi-Reel® |
| Power - Max | 50W |
| Product Photos | 8-TSDSON |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 5.7A, 10V |
| Series | OptiMOS™ |
| Standard Package | 1 |
| Supplier Device Package | PG-TSDSON-8 (3.3x3.3) |
| Vgs(th) (Max) @ Id | 4V @ 25µA |
