BFY196ES L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
From Infineon Technologies AG
| Status | ACTIVE |
| Collector Current-Max (IC) | 0.1000 A |
| Collector-base Capacitance-Max | 1 pF |
| Collector-emitter Voltage-Max | 12 V |
| Configuration | SINGLE |
| Highest Frequency Band | L BAND |
| Mfr Package Description | HERMETIC SEALED, MICRO-X1, 4 PIN |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | ROUND |
| Package Style | DISK BUTTON |
| Surface Mount | Yes |
| Terminal Form | FLAT |
| Terminal Position | RADIAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Polarity | NPN |
| Transistor Type | RF SMALL SIGNAL |
| Transition Frequency-Nom (fT) | 6500 MHz |
