FRS230H2
N-Channel Enhancement MOSFET - Radiation-Hardened at 1M RADs(Si).

From Harris Semiconductor

StatusDiscontinued
@(VDS) (V) (Test Condition)20
Absolute Max. Power Diss. (W)50
I(D) Abs. Drain Current (A)7
MilitaryN
PackageTO-257AA
V(BR)DSS (V)200
V(BR)GSS (V)20
r(DS)on Max. (Ohms).515

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