FHX35X KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
From Fujitsu Limited
| Status | ACTIVE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 4 V |
| FET Technology | HIGH ELECTRON MOBILITY |
| Highest Frequency Band | KU BAND |
| Mfr Package Description | DIE-4 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | DEPLETION |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | UNCASED CHIP |
| Power Gain-Min (Gp) | 8.5 dB |
| Surface Mount | Yes |
| Terminal Form | NO LEAD |
| Terminal Position | UPPER |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | GALLIUM ARSENIDE |
| Transistor Type | RF SMALL SIGNAL |
