2SK3594-01
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 50Milliohms; ID +/-45A; TO-220AB; PD 270W

From Fuji Semiconductor

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Dimensions10 x 4.5 x 15 mm
Forward Diode Voltage1.65 V
Forward Transconductance25 S
Height15 mm
Length10 mm
Maximum Continuous Drain Current±45 A
Maximum Drain Source Resistance66 mΩ
Maximum Drain Source Voltage200 V
Maximum Gate Source Voltage±30 V
Maximum Operating Temperature+150 °C
Maximum Power Dissipation270 W
Minimum Operating Temperature-55 °C
Mounting TypeThrough Hole
Number of Elements per Chip1
Operating Temperature Range-55 to +150 °C
Package TypeTO-220AB
Pin Count3
Typical Gate Charge @ Vgs51 nC @ 10 V
Typical Input Capacitance @ Vds1960 pF @ 75 V
Typical Turn On Delay Time20 ns
Typical TurnOff Delay Time53 ns
Width4.5 mm

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