1N4006G-T DIODE GEN PURP 800V 1A DO41
From Diodes Incorporated
| Capacitance @ Vr, F | 8pF @ 4V, 1MHz |
| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 5µA @ 800V |
| Datasheets | 1N4001-4007G,L Datasheet |
| Diode Type | Standard |
| Family | Diodes, Rectifiers - Single |
| Mounting Type | Through Hole |
| Online Catalog | Standard Diode |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Other Names | 1N4006G 1N4006GDITR 1N4006GT 1N4006GTR 1N4006GTR-ND |
| PCN Assembly/Origin | Qualification Assemby/Test Site 09/Jul/2014 |
| Package / Case | DO-204AL, DO-41, Axial |
| Packaging | Tape & Reel (TR) |
| Product Photos | 261-DO-41 |
| Reverse Recovery Time (trr) | 2µs |
| RoHS Information | RoHS Cert of Compliance |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Standard Package | 5,000 |
| Supplier Device Package | DO-41 |
| Voltage - DC Reverse (Vr) (Max) | 800V |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 1A |
